| 是否提供加工 | 是 | | ISC/ISCSEMI | | 型号 | MJ15003 | 应用范围 | 达林顿 | | 材料 | 硅(Si) | 极性 | NPN型 | | 结构 | 点接触型 | 封装形式 | TO-3 | | 封装材料 | 金属封装 |
DESCRIPTION ·High DC Current Gain- : hFE= 25(Min)@IC= ·Wide Area of Safe Operation ·Complement to Type MJ15004 APPLICATIONS·Designed for high power audio,disk head itioners and other linear applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃)SYMBOL | PARAMETER | VALUE | UNIT | VCBO | Collector-Base Voltage | 140 | V | VCEO | Collector-Emitter Voltage | 140 | V | VEBO | Emitter-Base Voltage | 5 | V | IC | Collector Current-Continuous | 20 | A | IB | Base Current-Continuous | 5 | A | IE | Emitter Current-Continuous | -25 | A | PD | Total Power Dissipation@TC=25℃ | 250 | W | Tj | Junction Temperature | 200 | ℃ | Tstg | Storage Temperature | -65~200 | ℃ |
ELECTRICAL CHARACTERISTICSTj=25℃unless otherwise specifiedSYMBOL | PARAMETER | CONDITIONS | MIN | MAX | UNIT | VCEO(SUS) | Collector-Emitter Sustaining Voltage | IC= 0.2A ;IB= 0 | 140 | | V | VCE(sat) | Collector-Emitter Saturation Voltage | IC= ; IB= 0. | | 1 | V | VBE(on) | Base-Emitter On Voltage | IC= ; VCE= 2V | | 2 | V | ICEO | Collector Cutoff Current | VCE= 140V; IB= 0 | | 0.25 | mA | ICEX | Collector Cutoff Current | VCE= 140V; VBE(OFF)= 1.5VVCE= 140V; VBE(OFF)= 1.5V;TC= 150℃ | | 0.1 2.0 | mA | IEBO | Emitter Cutoff Current | VEB= 5V; IC= 0 | | 0.1 | mA | hFE | DC Current Gain | IC= ; VCE= 2V | 25 | 150 | | Is/b | Second Breakdown Collector Current with Base Forward Biased | VCE= 50V,t= 1s, Nonrepetitive | 5 | | A | | VCE= 100V,t= 1s, Nonrepetitive | 1 | COB | Output Capacitance | IE= 0 ; VCB= 10V;ftest= 1.0MHz | | 1000 | pF | fT | Current-Gain—Bandwidth Product | IC= 0. ; VCE= 10V;ftest= 0.5MHz | 2 | | MHz |
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