| | STS | 型号 | ASE-HRM | | 新旧程度 | 8成新 | 设备所在地 | 深圳 | | 设备生产产地 | 英国 | 产品数 | 1 |
1、设备名称：STS MULTIPLEX ASE-HRM ICP ETCHER150mm - Max wafer size capable: 200mm - Year of Manufacture: October 2002 - Serial Number: 41543 Vacuum Load-lock For Single Chamber Multiplex systems (MESC): - MACS loader (cassette to cassette loader) - Carousel Load Lock (150mm) - Chamber lid temperature control - Fully automatic traner of substrates between the load-lock and the process chamber - Loader may be configured for substrates up to 200mm in diameter (currently set for 150mm) Multiplex ICP Process Chamber: - Production proven single wafer process chamber (aluminium) - Balun Coil for High Rate Etch - Turbo Pump - VAT Pendulum Vent Valve - Backside Helium Cooling (HBC2 module) - Electro-Static Chuck (ESC) - 13.5" ID Ceramic Chamber - Two chamber view ports - Remote sealed extracted gas box with orbitally welded gas lines - Electronics cabinet - Pentium based process module control computer - LCD flat panel monitor - Fully automatic multistep processing or manual operation - Advanced Energy LF-5 RF Generator (500W) - ENI ACG-3B RF Power Supply (13.56 MHz) - Advanced Energy 3001 3kW RF Power Supply (Coil) - TTi TGP110 10Mhz Pusle Generator - Delta Electromagnetic Power Supply - Milipore FC-2901 MFCs Gas Box with gas configuration as follows: - Ar - 50 sccm - O2 - 100 sccm - C4F8 - 600 sccm - 6 - 400 sccm - N2 - vent - Edwards iQDP80 Dry Pump - Edwards iH600 Dry Pump - Affinity PWG-060K Chiller - Affinity RAA-005T Chiller - System Cables (full set) - System Power: 208V, 60Hz, 3PH - Operations Manuals, Electrical Drawings and Documentation (Complete Manual Set) - Refurbished to meet original STS specifications by ex-STS factory trained technicians 6、设备中文介绍： 窗体顶端 型号规格：ICP ASE
生产制造厂商：英国STS公司 适用于4英寸硅片； 标准 ICP 深硅刻蚀工艺参数 : 20 微米深硅刻蚀 约 2.5 微米刻蚀窗口宽度 厚度大于 1 微米光刻胶掩膜或大约 0.5 微米 SiO2 掩膜 掩膜图形的硅暴露面积小于10% 刻蚀速度：>2 微米/分钟 光刻胶的选择比：>50:1 SiO2 的选择比：>100:1 边壁角度：90± 1 度 边壁粗糙度 (scallops)：<200 纳米 (峰与峰之间) 掩膜开始底部切口：每边小于 0.4 微米 均匀性 (芯片上)： <±5% 均匀性 (芯片与芯片之间)：<±5% 气体6 ，C4F8 ，Ar ，O2。 400 微米深硅刻蚀 大于80微米刻蚀窗口宽度 厚度大于10微米光刻胶掩膜或大于3.5微米SiO2掩膜 掩膜图形的硅暴露面积小于10% 刻蚀速度：>2微米/分钟 光刻胶的选择比：> 50:1 SiO2 的选择比：>100:1 边壁角度： 92+/-2 deg. 边壁粗糙度（scallops）：<400纳米（峰与峰之间） 掩膜开始底部切口： 每边小于 1.5 微米 均匀性 (芯片上) : <±5% 均匀性 (芯片与芯片之间) : <±5%
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